| PART |
Description |
Maker |
| SUB75P03-08 SUP75P03-08 |
P-Channel 30-V (D-S), 175C MOSFET P沟道30 V的（副）75C MOSFET
P-Channel 30-V (D-S) 175C MOSFET
P-Channel MOSFET
P-Channel Enhancement-Mode Transistors
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| RJK2006DPE-TL-E RJK2006DPJ10 RJK2006DPJ-15 |
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SI4946EY SI4946EY-T1 |
Dual N-Channel 60-V (D-S) , 175C MOSFET
Dual N-Channel 60-V (D-S), 175C MOSFET
Dual N-Channel 60-V (D-S), 175C MOSFET
Dual N-Channel 60-V (D-S)/ 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| SUP90N08-06 |
N-Channel 75-V (D-S) 175C MOSFET
|
Vishay
|
| SUP85N04-03 SUB85N04-03 |
N-Channel 40-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
